NTMFS6H800N Description
MOSFET Power, Single, N-Channel 80 V, 2.1 mW, 203 A NTMFS6H800N.
NTMFS6H800N Key Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb-Free and are RoHS pliant
- 55 to °C + 175
- Steady State
- Steady State (Note 2) RqJA
- Rev. 3