NTMFS6H801N Description
NTMFS6H801N MOSFET Power, Single, N-Channel 80 V, 2.8 mW, 157 A DATA SHEET .onsemi. V(BR)DSS 80 V RDS(ON) MAX 2.8 mW @ 10 V ID MAX 157 A D (5).
NTMFS6H801N Key Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb-Free and are RoHS pliant
- 55 to °C +175
- Steady State
- Steady State (Note 2) RqJA
- Rev. 3