* Advance 5x6 mm Package with Source Down and Center Gate Design to Improve Power Density, Efficiency, and Thermal Performance
* Low RDS(on) to Minimize Conduction Losses
* Low QG and Capacitance to Minimize Driver Losses
* These Devices are Pb
* Free, Halogen
NTMFSS0D9N03P8 Datasheet (253.71 KB)
NTMFSS0D9N03P8
253.71 KB
N-channel mosfet.
MOSFET - Power, Single N-Channel, Source-Down 30 V, 1.0 mW, 294 A NTMFSS0D9N03P8 DATA SHEET www.onsemi.com V(BR)DSS 30 V RDS(ON) MAX 1.0 mW @ 10 V .
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