Datasheet Summary
MOSFET
- Power, Single N-Channel, Source-Down
30 V, 1.0 mW, 294 A
DATA SHEET .onsemi.
V(BR)DSS 30 V
RDS(ON) MAX 1.0 mW @ 10 V 1.2 mW @ 4.5 V
ID MAX 294 A
Features
- Advance 5x6 mm Package with Source Down and Center Gate Design to Improve Power Density, Efficiency, and Thermal Performance
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb- Free, Halogen- Free / BFR Free and are RoHS pliant
Typical Applications
- ORing
- Motor Drives
- Power Load Switch
- DC- DC
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source...