| Description | MOSFET - Power, Single N-Channel, Source-Down 30 V, 1.0 mW, 294 A NTMFSS0D9N03P8 DATA SHEET www.onsemi.com V(BR)DSS 30 V RDS(ON) MAX 1.0 mW @ 10 V 1.2 mW @ 4.5 V ID MAX 294 A Features • Advance 5x6 mm Package with Source Down and Center Gate Design to Improve Power Density, Efficiency, and Thermal Performance • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Dri... |
| Features |
• Advance 5x6 mm Package with Source Down and Center Gate Design to Improve Power Density, Efficiency, and Thermal Performance • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen−Free / BFR Free and are RoHS Compliant Typical Applications • ORing • Motor Drives • Power... |
| Datasheet |
 NTMFSS0D9N03P8 Datasheet - 253.71KB |
