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NTMS4706N Power MOSFET
Features
30 V, 10.3 A, Single N−Channel, SO−8
• • • • • • • •
Low RDS(on) Low Gate Charge Standard SO−8 Single Package Pb−Free Package is Available
V(BR)DSS
www.DataSheet4U.com
http://onsemi.com
RDS(ON) TYP 9.0 mW @ 10 V 30 V 11.4 mW @ 4.5 V 10.3 A ID MAX (Note 1)
Applications
Notebooks, Graphics Cards Synchronous Rectification High Side Switch DC−DC Converters
Parameter Symbol VDSS VGS Steady State t v 10 s TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD ID Value 30 ±20 8.6 6.2 10.3 1.5 2.2 TA = 25°C TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, Tstg IS EAS ID 6.4 4.6 0.83 31 −55 to 150 2.