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NTMS4700N - Power MOSFET

Key Features

  • Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG.
  • Optimized for High Side Control.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com NTMS4700N Power MOSFET 30 V, 14.5 A, Single N−Channel, SO−8 Features • Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG • Optimized for High Side Control Applications • High Speed Switching Capability Applications http://onsemi.com V(BR)DSS 30 V RDS(on) TYP 6.0 mW @ 10 V 7.3 mW @ 4.5 V D ID MAX 14.