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NTMS4706N - Power MOSFET

Key Features

  • 30 V, 10.3 A, Single N.
  • Channel, SO.
  • 8.
  • Low RDS(on) Low Gate Charge Standard SO.
  • 8 Single Package Pb.
  • Free Package is Available V(BR)DSS www. DataSheet4U. com http://onsemi. com RDS(ON) TYP 9.0 mW @ 10 V 30 V 11.4 mW @ 4.5 V 10.3 A ID MAX (Note 1).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTMS4706N Power MOSFET Features 30 V, 10.3 A, Single N−Channel, SO−8 • • • • • • • • Low RDS(on) Low Gate Charge Standard SO−8 Single Package Pb−Free Package is Available V(BR)DSS www.DataSheet4U.com http://onsemi.com RDS(ON) TYP 9.0 mW @ 10 V 30 V 11.4 mW @ 4.5 V 10.3 A ID MAX (Note 1) Applications Notebooks, Graphics Cards Synchronous Rectification High Side Switch DC−DC Converters Parameter Symbol VDSS VGS Steady State t v 10 s TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD ID Value 30 ±20 8.6 6.2 10.3 1.5 2.2 TA = 25°C TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, Tstg IS EAS ID 6.4 4.6 0.83 31 −55 to 150 2.