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NTMS4916N - Power MOSFET

Key Features

  • 30 V, 11.6 A, N.
  • Channel, SO.
  • 8.
  • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi. com V(BR)DSS 30 V RDS(ON) MAX 9 mW @ 10 V 12 mW @ 4.5 V N.
  • Channel ID MAX 11.6 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTMS4916N Power MOSFET Features 30 V, 11.6 A, N−Channel, SO−8 • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 9 mW @ 10 V 12 mW @ 4.5 V N−Channel ID MAX 11.