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NTMS4917N - Power MOSFET

Features

  • 30 V, 10.5 A, N.
  • Channel, SO.
  • 8.
  • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi. com V(BR)DSS 30 V RDS(ON) MAX 11 mW @ 10 V 15 mW @ 4.5 V N.
  • Channel ID MAX 10.5 A.

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Full PDF Text Transcription

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NTMS4917N Power MOSFET Features 30 V, 10.5 A, N−Channel, SO−8 • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 11 mW @ 10 V 15 mW @ 4.5 V N−Channel ID MAX 10.
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