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NTMS4N01R2
Power MOSFET
4.2 Amps, 20 Volts
N−Channel Enhancement−Mode Single SO−8 Package
Features
• High Density Power MOSFET with Ultra Low RDS(on) Providing
Higher Efficiency
• Miniature SO−8 Surface Mount Package Saving Board Space;
Mounting Information for the SO−8 Package is Provided
• IDSS Specified at Elevated Temperature • Drain−to−Source Avalanche Energy Specified • Diode Exhibits High Speed, Soft Recovery • Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.
NTMS4N01R2 Datasheet
