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NTMS4176P - Power MOSFET

Key Features

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  • ăLow RDS(on) to Minimize Conduction Losses.
  • ăLow Capacitance to Minimize Driver Losses.
  • ăOptimized Gate Charge to Minimize Switching Losses.
  • ăSOIC-8 Surface Mount Package Saves Board Space.
  • ăThis is a Pb-Free Device.

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Full PDF Text Transcription (Reference)

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NTMS4176P Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 Features www.DataSheet4U.com •ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăSOIC-8 Surface Mount Package Saves Board Space •ăThis is a Pb-Free Device Applications http://onsemi.com V(BR)DSS -30 V RDS(on) Max 18 mW @ -10 V 30 mW @ -4.5 V ID Max -9.