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NTP30N20G - Power MOSFET

Download the NTP30N20G datasheet PDF. This datasheet also covers the NTP30N20 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Source.
  • to.
  • Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Avalanche Energy Specified.
  • IDSS and RDS(on) Specified at Elevated Temperature.
  • Pb.
  • Free Package is Available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTP30N20_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by onsemi

Part Number Description
NTP30N20 Power MOSFET
NTP30N06 Power MOSFET
NTP30N06L Power MOSFET
NTP35N15 Power MOSFET
NTP067N65S3H N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTP30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • Pb−Free Package is Available* Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA 25°C − Continuous @ TA 100°C − Pulsed (Note 1) Total Power Dissipation @ TA = 25°C Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 200 200 "30 "40 30 22 90 214 1.