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  ON Semiconductor Electronic Components Datasheet  

NTP70N08 Datasheet

80V Power MOSFET

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NTP70N08 pdf
NTP70N08, NTB70N08,
NTP70N08L, NTB70N08L
Product Preview
80 V Power MOSFET
ON Semiconductor utilizes its latest MOSFET technology process
to manufacture 80 V power MOSFET devices to achieve the lowest
possible on–resistance per silicon area. These 80 V devices are
designed for Power Management solutions in 42 V Automotive
system applications. Typical applications include integrated starter
www.DataSheet4aUlt.ecornmator, electronic power steering, electronic fuel injection,
catalytic converter heaters and other high power applications made
possible via an automotive 42 V bus. ON Semiconductor’s latest
technology offering continues to offer high avalanche energy
capability and low reverse recovery losses.
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown
Voltage
V(BR)DSS
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 80 Vdc, VGS = 0 Vdc)
(VDS = 80 Vdc, VGS = 0 Vdc,
TJ =150°C)
IDSS
Gate–Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
80
Vdc
––
µAdc
– 1.0
– 10
nAdc
±100
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
NTP/B70N08
VGS(th)
Vdc
2.0 3.0 4.0
NTP/B70N08L
1.0 1.5 2.0
Static Drain–to–Source
On–Resistance
RDS(on)
m
(ID = 35 Adc)
NTP/B70N08, VGS= 10 V
NTP/B70N08L, VGS = 5 V
– 19
– 21
http://onsemi.com
70 AMPERES
70N08 Typ RDS(on) = 19 m
70N08L Typ RDS(on) = 21 m
TO–220 (XTP)
CASE 221A–09
STYLE 5
D2PAK (XTB)
CASE 418B
STYLE 2
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 0
1
Publication Order Number:
NTP70N08/D


  ON Semiconductor Electronic Components Datasheet  

NTP70N08 Datasheet

80V Power MOSFET

No Preview Available !

NTP70N08 pdf
NTP70N08, NTB70N08, NTP70N08L, NTB70N08L
PACKAGE DIMENSIONS
TO–220
CASE 221A–09
ISSUE AA
www.DataSheet4U.com
Q
H
Z
B
4
1 23
F
T
–T–
SEATING
PLANE
C
S
A
U
K
L
V
G
N
D
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 ---
Z --- 0.080
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 ---
--- 2.04
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
http://onsemi.com
2


Part Number NTP70N08
Description 80V Power MOSFET
Maker ON Semiconductor
Total Page 4 Pages
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NTP70N08 Datasheet PDF
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