Download NTP75N03-06 Datasheet PDF
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NTP75N03-06 Key Features

  • Ultra-Low RDS(on), Single Base, Advanced Technology
  • SPICE Parameters Available
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperatures
  • High Avalanche Energy Capability
  • ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
  • Pb-Free Packages are Available

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NTP75N03-06 Description

This power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The Drain−to−Source Diode has a fast response with soft recovery.