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  ON Semiconductor Electronic Components Datasheet  

NTR3161NT1G Datasheet

Power MOSFET

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NTR3161N
Power MOSFET
20 V, 3.3 A, Single NChannel, SOT23
Features
Low RDS(on)
Low Gate Charge
Low Threshold Voltage
HalideFree
This is a PbFree Device
Applications
DCDC Conversion
Battery Management
Load/Power Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DraintoSource Voltage
VDSS
20
V
GatetoSource Voltage
VGS
±8
V
Continuous Drain
Current (Note 1)
TA = 25°C
t 30 s
TA = 85°C
ID
3.3
2.3
A
t 10 s TA = 25°C
4.0
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
t 10 s
0.82
W
1.25
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
6.4
A
TJ,
Tstg
55 to
150
°C
IS
0.65 A
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoAmbient Steady State (Note 1)
RqJA
260 °C/W
JunctiontoAmbient t 30 s
RqJA
153 °C/W
JunctiontoAmbient t < 10 s (Note 1)
RqJA
100 °C/W
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
http://onsemi.com
V(BR)DSS
20 V
RDS(on) MAX
50 mW @ 4.5 V
63 mW @ 2.5 V
87 mW @ 1.8 V
ID MAX
3.3 A
3.0 A
2.5 A
SIMPLIFIED SCHEMATIC NCHANNEL
D
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
3
3
Drain
1
2
SOT23
CASE 318
STYLE 21
TRCMG
G
1
1
Gate
2
Source
TRC = Specific Device Code
M
= Date Code
G
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTR3161NT1G SOT23 3000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
1
June, 2008 Rev. 0
Publication Order Number:
NTR3161N/D


  ON Semiconductor Electronic Components Datasheet  

NTR3161NT1G Datasheet

Power MOSFET

No Preview Available !

NTR3161N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS
VGS = 0 V, ID = 250 mA
20
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
/TJ
ID = 250 mA, Reference to 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 16 V, TJ = 25°C
VGS = 0 V, VDS = 16 V, TJ = 125°C
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 2)
IGSS
VDS = 0 V, VGS = "8 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
0.4
Negative Threshold Temperature
Coefficient
VGS(TH)
/TJ
DraintoSource OnResistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 4.5 V, ID = 3.3 A
VGS = 2.5 V, ID = 3.0 A
VGS = 1.8 V, ID = 2.5 A
VDS = 5.0 V, ID = 3.3 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
VGS = 4.5 V, VDS = 10 V,
ID = 3.3 A
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDD = 10 V,
ID = 3.3 A, RG = 6 W
Forward Diode Voltage
VSD
VGS = 0 V, IS = 1.0 A, TJ = 25°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta
VGS = 0 V, IS = 1.0 A,
tb
dISD/dt = 100 A/ms
Reverse Recovery Charge
QRR
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Typ
16.2
0.6
2.4
38
44
52
10.5
540
80
62
7.3
0.4
0.8
1.6
2.4
6.7
11.6
18.6
23.2
0.65
14.7
5.2
9.5
3.3
Max
Units
V
mV/°C
1.0
mA
10
100
nA
1.0
V
mV/°C
50
mW
63
87
S
pF
nC
W
ns
1.0
V
ns
nC
http://onsemi.com
2


Part Number NTR3161NT1G
Description Power MOSFET
Maker ON Semiconductor
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