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NTR3161NT1G - Power MOSFET

Download the NTR3161NT1G datasheet PDF. This datasheet also covers the NTR3161N variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low RDS(on).
  • Low Gate Charge.
  • Low Threshold Voltage.
  • Halide.
  • Free.
  • This is a Pb.
  • Free Device.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTR3161N_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by onsemi

Part Number Description
NTR3161N Power MOSFET
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NTR3162PT1G Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTR3161N Power MOSFET 20 V, 3.3 A, Single N−Channel, SOT−23 Features • Low RDS(on) • Low Gate Charge • Low Threshold Voltage • Halide−Free • This is a Pb−Free Device Applications • DC−DC Conversion • Battery Management • Load/Power Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V Continuous Drain Current (Note 1) TA = 25°C t ≤ 30 s TA = 85°C ID 3.3 2.3 A t ≤ 10 s TA = 25°C 4.0 Power Dissipation (Note 1) Steady State TA = 25°C PD t ≤ 10 s 0.82 W 1.25 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM 6.