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NTR3161N - Power MOSFET

Key Features

  • Low RDS(on).
  • Low Gate Charge.
  • Low Threshold Voltage.
  • Halide.
  • Free.
  • This is a Pb.
  • Free Device.

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Full PDF Text Transcription for NTR3161N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NTR3161N. For precise diagrams, and layout, please refer to the original PDF.

NTR3161N Power MOSFET 20 V, 3.3 A, Single N−Channel, SOT−23 Features • Low RDS(on) • Low Gate Charge • Low Threshold Voltage • Halide−Free • This is a Pb−Free Device Appl...

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• Low Threshold Voltage • Halide−Free • This is a Pb−Free Device Applications • DC−DC Conversion • Battery Management • Load/Power Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V Continuous Drain Current (Note 1) TA = 25°C t ≤ 30 s TA = 85°C ID 3.3 2.3 A t ≤ 10 s TA = 25°C 4.0 Power Dissipation (Note 1) Steady State TA = 25°C PD t ≤ 10 s 0.82 W 1.25 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM

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