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NTR3161N
Power MOSFET
20 V, 3.3 A, Single N−Channel, SOT−23
Features
• Low RDS(on) • Low Gate Charge • Low Threshold Voltage • Halide−Free • This is a Pb−Free Device
Applications
• DC−DC Conversion • Battery Management • Load/Power Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±8
V
Continuous Drain Current (Note 1)
TA = 25°C
t ≤ 30 s
TA = 85°C
ID
3.3
2.3
A
t ≤ 10 s TA = 25°C
4.0
Power Dissipation (Note 1)
Steady
State
TA = 25°C
PD
t ≤ 10 s
0.82
W
1.25
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
IDM
6.
NTR3161NT1G Datasheet
