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NTR3161NT1G - Power MOSFET

Download the NTR3161NT1G datasheet PDF. This datasheet also covers the NTR3161N variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low RDS(on).
  • Low Gate Charge.
  • Low Threshold Voltage.
  • Halide.
  • Free.
  • This is a Pb.
  • Free Device.

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Note: The manufacturer provides a single datasheet file (NTR3161N_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for NTR3161NT1G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NTR3161NT1G. For precise diagrams, and layout, please refer to the original PDF.

NTR3161N Power MOSFET 20 V, 3.3 A, Single N−Channel, SOT−23 Features • Low RDS(on) • Low Gate Charge • Low Threshold Voltage • Halide−Free • This is a Pb−Free Device Appl...

View more extracted text
• Low Threshold Voltage • Halide−Free • This is a Pb−Free Device Applications • DC−DC Conversion • Battery Management • Load/Power Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V Continuous Drain Current (Note 1) TA = 25°C t ≤ 30 s TA = 85°C ID 3.3 2.3 A t ≤ 10 s TA = 25°C 4.0 Power Dissipation (Note 1) Steady State TA = 25°C PD t ≤ 10 s 0.82 W 1.25 Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDM

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