* Advanced Source−Down Package Technology (3.3 x 3.3 mm) with
Excellent Thermal Conduction
* Ultra Low RDS(on) to Improve System Efficiency
* Low QG and Capac.
* High Switching Frequency DC−DC Conversion
* Synchronous Rectifier
MAXIMUM RATINGS (TJ = 25°C unless otherwise.
N-Channel Power MOSFET
Image gallery
TAGS
Manufacturer
Related datasheet