NVB055N60S5F
NVB055N60S5F is N-Channel MOSFET manufactured by onsemi.
Description
The SUPERFET V MOSFET FRFET series has optimized body diode performance characteristics. This can allow for the removal of ponents in the application and improve application performance and reliability, particularly when soft switching topologies are used.
Features
- 650 V @ TJ = 150°C / Typ. RDS(on) = 44 m W
- 100% Avalanche Tested
- AEC- Q101 Qualified and PPAP Capable
- Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
Applications
- Electric Vehicle On Board Chargers
- EV Main Battery DC/DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage Gate- to- Source Voltage
VDSS
±30
AC (f > 1 Hz)
±30
Continuous Drain Current
Power Dissipation Pulsed Drain Current Pulsed Source Current (Body Diode)
TC = 25°C
TC = 100°C
TC = 25°C
TC = 25°C, t P = 10 ms
278 W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to °C +150
Source Current (Body Diode)
Single Pulse Avalanche Energy
(IL = 7 A, RG = 25...
