NVB110N65S3F Key Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 93 mW
- Ultra Low Gate Charge (Typ. Qg = 58 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 533 pF)
- 100% Avalanche Tested
- Qualified with AEC-Q101
- These Devices are Pb-Free and are RoHS pliant