NVB110N65S3F mosfet equivalent, n-channel mosfet.
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 93 mW
* Ultra Low Gate Charge (Typ. Qg = 58 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 533 pF)
* .
* Automotive On Board Charger
* Automotive DC/DC Converter for HEV
www.onsemi.com
V(BR)DSS 650 V
RDS(ON) MAX .
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