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NTB5404N, NTP5404N, NVB5404N
Power MOSFET
40 V, 167 A, Single N−Channel, D2PAK & TO−220
Features
• Low RDS(on) • High Current Capability • Low Gate Charge • AEC−Q101 Qualified and PPAP Capable − NVB5404N • These Devices are Pb−Free and are RoHS Compliant
Applications
• Electronic Brake Systems • Electronic Power Steering • Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
VDSS 40 V
Gate−to−Source Voltage
VGS ±20 V
Continuous Drain Current − RqJC
Steady TC = 25°C State TC = 100°C
ID
167 A 118
Power Dissipation − RqJC
Steady State
TC = 25°C
PD
254 W
Continuous Drain
Current − RqJA (Note 1)
Steady TA = 25°C State
TA = 100°C
ID
24 A 17
Power Dissipation − RqJA (Note 1)
Steady TA = 25°C State
Pulsed D
NVB5404N Datasheet
