NVCR4LS2D8N08M7A
NVCR4LS2D8N08M7A is N-Channel MOSFET manufactured by onsemi.
Features
- Typical RDS(on) = 2.2 m W at VGS = 10 V
- Typical Qg(tot) = 86 n C at VGS = 10 V
- AEC- Q101 Qualified
- Ro HS pliant
DIMENSION (mm)
Die Size
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
Gate and Source: Al Si Cu Drain: Ti- Ni V- Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer Sawn on UV Tape Bad Dice Identified in Inking Gross Die Counts: 2162
4953 × 2413 4933 ±15 × 2393 ±15 4748.7 × 2184.6 427.1 × 549.5 101.6 ±19.1
ORDERING INFORMATION
Device NVCR4LS2D8N08M7A
Package
Wafer Sawn on Foil
REMENDED STORAGE CONDITIONS
Temperature RH
22 to 28°C 40 to 66%
The Chip is 100% Probed to Meet the Conditions and Limits Specified at TJ = 25°C.
Symbol
Parameter
Condition
Min
Typ
Max
Unit
BVDSS
Drain to Source Breakdown Voltage
ID = 250 m A, VGS = 0 V
- -
IDSS
Drain to Source Leakage Current
VDS = 80 V, VGS = 0 V
- -
1 m...
