Full PDF Text Transcription for NVD5117PL (Reference)
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NVD5117PL. For precise diagrams, and layout, please refer to the original PDF.
NVD5117PL MOSFET – Power, Single, P-Channel -60 V, 16 mW, -61 A Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specifie...
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onduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −60 V Gate−to−Source Voltage VGS "20 V Continuous Drain Cur- TC = 25°C ID rent RqJC (Note 1) Steady TC = 100°C Power Dissipation RqJC State TC = 25°C PD (Note 1) TC = 100°C −61 A −43 118 W 59 Continuous Drain Cur- TA = 25°C ID rent RqJA (Notes 1 & 2) Steady TA = 100°C Power Dissipation RqJA State TA = 25°C PD (Notes 1 & 2) TA = 100°C −11 A −8 4.1 W 2.
NVD5117PL Datasheet
