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NVD5117PL
MOSFET – Power, Single, P-Channel
-60 V, 16 mW, -61 A
Features
• Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source Voltage
VGS
"20 V
Continuous Drain Cur-
TC = 25°C
ID
rent RqJC (Note 1)
Steady TC = 100°C
Power Dissipation RqJC State TC = 25°C
PD
(Note 1)
TC = 100°C
−61
A
−43
118 W
59
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1 & 2) Steady TA = 100°C
Power Dissipation RqJA State TA = 25°C
PD
(Notes 1 & 2)
TA = 100°C
−11
A
−8
4.1
W
2.
NVD5117PL Datasheet
