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NVH4L045N065SC1 - SiC MOSFET

NVH4L045N065SC1 Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * 33 mohm, 650 V, M2, TO-247-4L NVH4L045N065SC1 .

NVH4L045N065SC1 Features

* Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V
* Ultra Low Gate Charge (QG(tot) = 105 nC)
* High Speed Switching with Low Capacitance (Coss = 162 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This De

NVH4L045N065SC1 Applications

* Automotive On Board Charger
* Automotive DC
* DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 650 V Gate
* to
* Source Voltage VGS
* 8/+22 V Recomm

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