NVH4L018N075SC1 Description
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET 13.5 mohm, 750 V, M2, TO-247-4L NVH4L018N075SC1 V(BR)DSS 750 V RDS(ON) MAX 18 mW @ 18 V D ID MAX 140.
NVH4L018N075SC1 Key Features
- Typ. RDS(on) = 13.5 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 262 nC)
- High Speed Switching with Low Capacitance (Coss = 365 pF)
- 100% Avalanche Tested
- AEC-Q101 Qualified and PPAP Capable
- This Device is Halide Free and RoHS pliant with exemption 7a