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NVH4L018N075SC1 - SiC MOSFET

Key Features

  • Typ. RDS(on) = 13.5 mW @ VGS = 18 V Typ. RDS(on) = 18 mW @ VGS = 15 V.
  • Ultra Low Gate Charge (QG(tot) = 262 nC).
  • High Speed Switching with Low Capacitance (Coss = 365 pF).
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750 V, M2, TO-247-4L NVH4L018N075SC1 V(BR)DSS 750 V RDS(ON) MAX 18 mW @ 18 V D ID MAX 140 A Features • Typ. RDS(on) = 13.5 mW @ VGS = 18 V Typ.