NVH4L018N075SC1
NVH4L018N075SC1 is SiC MOSFET manufactured by onsemi.
Features
- Typ. RDS(on) = 13.5 m W @ VGS = 18 V
Typ. RDS(on) = 18 m W @ VGS = 15 V
- Ultra Low Gate Charge (QG(tot) = 262 n C)
- High Speed Switching with Low Capacitance (Coss = 365 p F)
- 100% Avalanche Tested
- AEC- Q101 Qualified and PPAP Capable
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- Automotive On Board Charger
- Automotive DC-DC Converter for EV/HEV
- Automotive Traction Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 8/+22 V
Remended Operation Values TC < 175°C VGSop
- 5/+18 V of Gate- to- Source Voltage
Continuous Drain Current (Note 1)
Steady TC = 25°C
State
Power Dissipation (Note 1)
500 W
Continuous Drain Current (Note 1)
Steady TC = 100°C
State
Power Dissipation (Notes 1)
250...
