NVH4L027N65S3F Datasheet | onsemi

Features - Ultra Low Gate Charge & Low Effective Output Capacitance - Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage - DC VGSS Gate- to- Source Voltage - AC (f > 1 Hz) VGSS Drain Current - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 3) IDM Power Dissipation (TC = 25°C) Power Dissipation - Derate Above 25°C PD Operating Junction and Storage Temperature Range TJ, TSTG 650 ±30 ±30 75 60 187.5 595 4.76 - 55 to +150 V V V A A A W W/°C °C Single Pulsed Avalanche Energy (Note 4) Repetitive Avalanche Energy (Note 3) MOSFET dv/dt EAS EAR dv/dt 1610 5.95 100 m J m J V/ns Peak Diode Recovery dv/dt (Note 5) dv/dt 50 V/ns Max. Lead Temperature for Soldering Purposes (1/8″ from case for 5...