NVH4L025N065SC1 Description
MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 19 mW, 99.
NVH4L025N065SC1 Key Features
- Typ. RDS(on) = 19 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 164 nC)
- Low Capacitance (Coss = 278 pF)
- 100% Avalanche Tested
- AEC-Q101 Qualified and PPAP Capable
- This Device is Pb-Free and is RoHS pliant