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NVH4L060N065SC1 - SiC MOSFET

Key Features

  • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW @ VGS = 15 V.
  • Ultra Low Gate Charge (QG(tot) = 74 nC).
  • Low Capacitance (Coss = 133 pF).
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Pb.
  • Free and is RoHS Compliant Typical.

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MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 44 mW, 47 A NVH4L060N065SC1 Features • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ.