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NVHL020N090SC1 - N-Channel MOSFET

Key Features

  • Typ. RDS(on) = 20 mW.
  • Ultra Low Gate Charge (typ. QG(tot) = 196 nC).
  • Low Effective Output Capacitance (typ. Coss = 296 pF).
  • 100% UIL Tested.
  • Qualified According to AEC.
  • Q101.
  • RoHS Compliant Typical.

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MOSFET – SiC Power, Single N-Channel, TO247-3L 900 V, 20 mW, 118 A NVHL020N090SC1 Features • Typ. RDS(on) = 20 mW • Ultra Low Gate Charge (typ. QG(tot) = 196 nC) • Low Effective Output Capacitance (typ.