NVHL020N120SC1 Datasheet Text
MOSFET
- SiC Power, Single N-Channel
NVHL020N120SC1
1200 V, 20 mW, 103 A
Features
- Typ. RDS(on) = 20 mW
- Ultra Low Gate Charge (typ. QG(tot) = 203 nC)
- Low Effective Output Capacitance (typ. Coss = 260 pF)
- 100% UIL Tested
- Qualified According to AEC- Q101
- These Devices are RoHS pliant
Typical Applications
- Automotive On Board Charger
- Automotive DC/DC converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate- to- Source Voltage
TC < 175°C
VDSS VGS VGSop
1200
- 15/+25
- 5/+20
V V V
Continuous Drain Current RqJC Power Dissipation RqJC Continuous Drain Current RqJC Power Dissipation RqJC Pulsed Drain Current (Note 2)
Steady TC = 25°C State
Steady State...