900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

NVHL020N120SC1 Datasheet

N-Channel MOSFET

No Preview Available !

MOSFET - SiC Power, Single
N-Channel
NVHL020N120SC1
1200 V, 20 mW, 103 A
Features
Typ. RDS(on) = 20 mW
Ultra Low Gate Charge (typ. QG(tot) = 203 nC)
Low Effective Output Capacitance (typ. Coss = 260 pF)
100% UIL Tested
Qualified According to AECQ101
These Devices are RoHS Compliant
Typical Applications
Automotive On Board Charger
Automotive DC/DC converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Recommended Opera-
tion Values of Gateto
Source Voltage
TC < 175°C
VDSS
VGS
VGSop
1200
15/+25
5/+20
V
V
V
Continuous Drain
Current RqJC
Power Dissipation RqJC
Continuous Drain
Current RqJC
Power Dissipation RqJC
Pulsed Drain Current
(Note 2)
Steady TC = 25°C
State
Steady
State
TC = 100°C
TA = 25°C
ID
PD
ID
PD
IDM
103 A
535 W
73 A
267 W
412 A
Single Pulse Surge Drain
Current Capability
TA = 25°C, tp = 10 ms,
RG = 4.7 W
Operating Junction and Storage Temperature
Range
IDSC
TJ, Tstg
807
55 to
+175
A
°C
Source Current (Body Diode)
IS 54 A
Single Pulse DraintoSource Avalanche
Energy (IL(pk) = 23 A, L = 1 mH) (Note 3)
EAS 264 mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoCase (Note 1)
RqJC
0.28 °C/W
JunctiontoAmbient (Note 1)
RqJA
40 °C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 264 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23 A, VDD =
120 V, VGS = 18 V.
www.onsemi.com
V(BR)DSS
1200 V
RDS(on) MAX
28 mW @ 20 V
ID MAX
103 A
NCHANNEL MOSFET
D
G
S
G DS
TO2473LD
CASE 340CX
MARKING DIAGRAM
$Y&Z&3&K
NVHL020
N120SC1
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
&K = Lot
NVHL020N120SC1 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
October, 2019 Rev. 0
1
Publication Order Number:
NVHL020N120SC1/D


  ON Semiconductor Electronic Components Datasheet  

NVHL020N120SC1 Datasheet

N-Channel MOSFET

No Preview Available !

NVHL020N120SC1
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 1 mA
ID = 1 mA, referenced to 25_C
1200
900
V
mV/_C
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS
IDSS
IGSS
VGS = 0 V, VDS = 1200 V, TJ = 25_C
VGS = 0 V, VDS = 1200 V, TJ = 175_C
VGS = +25/15 V, VDS = 0 V
100 mA
250
±1 mA
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 20 mA
1.8 2.7 4.3
V
Recommended Gate Voltage
VGOP
5 +20 V
DraintoSource On Resistance
RDS(on)
VGS = 20 V, ID = 60 A, TJ = 25_C
20 28 mW
VGS = 20 V, ID = 60 A, TJ = 175_C 35 50
Forward Transconductance
gFS
VDS = 10 V, ID = 60 A
28
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Gate Resistance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(tot)
QG(th)
QGS
QGD
RG
VGS = 0 V, f = 1 MHz, VDS = 800 V
VGS = 5/20 V, VDS = 600 V, ID = 80 A
f = 1 MHz
2890
260
22
203
33
66
47
1.81
pF
nC
W
Turn-On Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
Turn-On Switching Loss
EON
Turn-Off Switching Loss
EOFF
Total Switching Loss
ETOT
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 5/20 V, VDS = 800 V,
ID = 80 A, RG = 2 W,
Inductive Load
25
57
45
11
2718
326
3040
ns
mJ
Continuous DraintoSource Diode
Forward Current
ISD
VGS = 5 V, TJ = 25_C
− − 54 A
Pulsed DraintoSource Diode For-
ward Current (Note 2)
ISDM
VGS = 5 V, TJ = 25_C
− − 412 A
Forward Diode Voltage
VSD
VGS = 5 V, ISD = 30 A, TJ = 25_C 3.7
V
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
VGS = 5/20 V, ISD = 80 A,
dIS/dt = 1000 A/ms
31 ns
240 nC
Reverse Recovery Energy
EREC
10 mJ
Peak Reverse Recovery Current
IRRM
15
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2


Part Number NVHL020N120SC1
Description N-Channel MOSFET
Maker ON Semiconductor
PDF Download

NVHL020N120SC1 Datasheet PDF






Similar Datasheet

1 NVHL020N120SC1 N-Channel MOSFET
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy