
	ON Semiconductor Electronic Components Datasheet

NVHL020N120SC1 Datasheet

N-Channel MOSFET

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MOSFET - SiC Power, Single

N-Channel

NVHL020N120SC1

1200 V, 20 mW, 103 A

Features

• Typ. RDS(on) = 20 mW

• Ultra Low Gate Charge (typ. QG(tot) = 203 nC)

• Low Effective Output Capacitance (typ. Coss = 260 pF)

• 100% UIL Tested

• Qualified According to AEC−Q101

• These Devices are RoHS Compliant

Typical Applications

• Automotive On Board Charger

• Automotive DC/DC converter for EV/HEV

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol Value

Unit

Drain−to−Source Voltage

Gate−to−Source Voltage

Recommended Opera-

tion Values of Gate−to−

Source Voltage

TC < 175°C

VDSS

VGS

VGSop

1200

−15/+25

−5/+20

Continuous Drain

Current RqJC

Power Dissipation RqJC

Continuous Drain

Current RqJC

Power Dissipation RqJC

Pulsed Drain Current

(Note 2)

Steady TC = 25°C

State

Steady

State

TC = 100°C

TA = 25°C

IDM

103 A

535 W

73 A

267 W

412 A

Single Pulse Surge Drain

Current Capability

TA = 25°C, tp = 10 ms,

RG = 4.7 W

Operating Junction and Storage Temperature

Range

IDSC

TJ, Tstg

807

−55 to

+175

°C

Source Current (Body Diode)

IS 54 A

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 23 A, L = 1 mH) (Note 3)

EAS 264 mJ

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol Value Unit

Junction−to−Case (Note 1)

RqJC

0.28 °C/W

Junction−to−Ambient (Note 1)

RqJA

40 °C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. EAS of 264 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23 A, VDD =

120 V, VGS = 18 V.

www.onsemi.com

V(BR)DSS

1200 V

RDS(on) MAX

28 mW @ 20 V

ID MAX

103 A

N−CHANNEL MOSFET

G DS

TO−247−3LD

CASE 340CX

MARKING DIAGRAM

$Y&Z&3&K

NVHL020

N120SC1

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Data Code (Year & Week)

&K = Lot

NVHL020N120SC1 = Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

October, 2019 − Rev. 0

Publication Order Number:

NVHL020N120SC1/D


	ON Semiconductor Electronic Components Datasheet

NVHL020N120SC1 Datasheet

N-Channel MOSFET

No Preview Available !

NVHL020N120SC1

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS

V(BR)DSS/TJ

VGS = 0 V, ID = 1 mA

ID = 1 mA, referenced to 25_C

1200

−

900

−V

− mV/_C

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

ON CHARACTERISTICS

IDSS

IGSS

VGS = 0 V, VDS = 1200 V, TJ = 25_C

VGS = 0 V, VDS = 1200 V, TJ = 175_C

VGS = +25/−15 V, VDS = 0 V

−

− 100 mA

− 250

− ±1 mA

Gate Threshold Voltage

VGS(th)

VGS = VDS, ID = 20 mA

1.8 2.7 4.3

Recommended Gate Voltage

VGOP

−5 − +20 V

Drain−to−Source On Resistance

RDS(on)

VGS = 20 V, ID = 60 A, TJ = 25_C

− 20 28 mW

VGS = 20 V, ID = 60 A, TJ = 175_C − 35 50

Forward Transconductance

gFS

VDS = 10 V, ID = 60 A

− 28 −

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Gate Resistance

SWITCHING CHARACTERISTICS

CISS

COSS

CRSS

QG(tot)

QG(th)

QGS

QGD

VGS = 0 V, f = 1 MHz, VDS = 800 V

VGS = −5/20 V, VDS = 600 V, ID = 80 A

f = 1 MHz

−

2890

260

203

1.81

−

Turn-On Delay Time

td(on)

Rise Time

Turn−Off Delay Time

td(off)

Fall Time

Turn-On Switching Loss

EON

Turn-Off Switching Loss

EOFF

Total Switching Loss

ETOT

DRAIN−SOURCE DIODE CHARACTERISTICS

VGS = −5/20 V, VDS = 800 V,

ID = 80 A, RG = 2 W,

Inductive Load

− 25 −

− 57 −

− 45 −

− 11 −

− 2718 −

− 326 −

− 3040 −

Continuous Drain−to−Source Diode

Forward Current

ISD

VGS = −5 V, TJ = 25_C

− − 54 A

Pulsed Drain−to−Source Diode For-

ward Current (Note 2)

ISDM

VGS = −5 V, TJ = 25_C

− − 412 A

Forward Diode Voltage

VSD

VGS = −5 V, ISD = 30 A, TJ = 25_C − 3.7 −

Reverse Recovery Time

Reverse Recovery Charge

tRR

QRR

VGS = −5/20 V, ISD = 80 A,

dIS/dt = 1000 A/ms

− 31 − ns

− 240 − nC

Reverse Recovery Energy

EREC

− 10 − mJ

Peak Reverse Recovery Current

IRRM

− 15 −

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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NVHL020N120SC1 Datasheet

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