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NVHL020N120SC1 N-Channel MOSFET

NVHL020N120SC1 Description

MOSFET - SiC Power, Single N-Channel NVHL020N120SC1 1200 V, 20 mW, 103 A .

NVHL020N120SC1 Features

* Typ. RDS(on) = 20 mW
* Ultra Low Gate Charge (typ. QG(tot) = 203 nC)
* Low Effective Output Capacitance (typ. Coss = 260 pF)
* 100% UIL Tested
* Qualified According to AEC
* Q101

NVHL020N120SC1 Applications

* Automotive On Board Charger
* Automotive DC/DC converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Recommended Operation Values of Gate
* to

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N-Channel MOSFET ON Semiconductor
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