NVHL020N090SC1 Description
MOSFET SiC Power, Single N-Channel, TO247-3L 900 V, 20 mW, 118 A NVHL020N090SC1.
NVHL020N090SC1 Key Features
- Typ. RDS(on) = 20 mW
- Ultra Low Gate Charge (typ. QG(tot) = 196 nC)
- Low Effective Output Capacitance (typ. Coss = 296 pF)
- 100% UIL Tested
- Qualified According to AEC-Q101
- RoHS pliant