Datasheet Summary
MOSFET
- SiC Power, Single N-Channel, TO247-3L
650 V, 19 mW, 99 A
Features
- Typ. RDS(on) = 19 mW @ VGS = 18 V
Typ. RDS(on) = 25 mW @ VGS = 15 V
- Ultra Low Gate Charge (QG(tot) = 164 nC)
- Low Capacitance (Coss = 278 pF)
- 100% Avalanche Tested
- AEC- Q101 Qualified and PPAP Capable
- This Device is Pb- Free and is RoHS pliant
Typical Applications
- Automotive On Board Charger
- Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 8/+22 V
Remended Operation Values TC < 175°C VGSop
- 5/+18 V of Gate- to- Source Voltage
Continuous Drain...