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  ON Semiconductor Electronic Components Datasheet  

NVMFS5113PL Datasheet

Power MOSFET

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NVMFS5113PL
MOSFET – Power, Single
P-Channel
-60 V, 14 mW, -64 A
Features
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
NVMFS5113PLWF Wettable Flanks Product
NVM Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
rent RqJC (Notes 1, 2, 3)
Power
(Notes
Dissipation
1, 2)
RqJC
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain Cur-
rent RqJA (Notes 1, 2, 3)
Power
(Notes
Dissipation
1, 2)
RqJA
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
60
"20
64
45
150
75
10
7
3.8
1.9
415
55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 150 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 46 A, L = 0.3 mH, RG = 25 W)
EAS 315 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoCase Steady State (Drain)
(Note 2)
RqJC
1.0 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
39 °C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS
60 V
RDS(on)
14 mW @ 10 V
22 mW @ 4.5 V
ID
64 A
S (1, 2, 3)
G (4)
PChannel
D (5, 6)
1
DFN5
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
July, 2019 Rev. 3
1
Publication Order Number:
NVMFS5113PL/D


  ON Semiconductor Electronic Components Datasheet  

NVMFS5113PL Datasheet

Power MOSFET

No Preview Available !

NVMFS5113PL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 4)
IGSS
VGS = 0 V, ID = 250 mA
VVDGSS==060V,V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = "20 V
60
1.0
100
"100
V
mA
nA
Gate Threshold Voltage
DraintoSource On Resistance
Froward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 17 A
VGS = 4.5 V, ID = 5 A
VDS = 15 V, ID = 15 A
1.5 2.5 V
10.5 14 mW
16 22
43 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Plateau Voltage
VGP
SWITCHING CHARACTERISTICS (Notes 4)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VDS = 48 V,
ID = 17 A
VGS = 4.5 V
VGS = 10 V
VGS = 10 V, VDS = 48 V,
ID = 17 A
4400
505
319
45
83
4
13
27
3.5
pF
nC
V
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 48 V,
ID = 17 A, RG = 2.5 W
15 ns
37
54
77
Forward Diode Voltage
VSD
VISG=S
=0
17
V,
A
TJ = 25°C
TJ = 125°C
0.79
0.65
1.0
V
Reverse Recovery Time
tRR
41 ns
Charge Time
Discharge Time
ta
tb
VGS
=
0
V,
Is
d=ls/d1t7=A100
A/ms,
22
19
Reverse Recovery Charge
QRR
50 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
www.onsemi.com
2


Part Number NVMFS5113PL
Description Power MOSFET
Maker ON Semiconductor
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