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NVMFS5832NL - Power MOSFET

Key Features

  • 40 V, 4.2 mW, 120 A, Single N.
  • Channel.
  • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC.
  • Q101 Qualified and PPAP Capable These are Pb.
  • Free Devices http://onsemi. com V(BR)DSS 40 V Value 40 ± 20 120 84 Unit V V A D (5,6) RDS(ON) MAX 4.2 mW @ 10 V 6.5 mW @ 4.5 V ID MAX 120 A.

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Full PDF Text Transcription (Reference)

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NVMFS5832NL Power MOSFET Features 40 V, 4.2 mW, 120 A, Single N−Channel • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices http://onsemi.com V(BR)DSS 40 V Value 40 ± 20 120 84 Unit V V A D (5,6) RDS(ON) MAX 4.2 mW @ 10 V 6.5 mW @ 4.