The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NTMFS5834NL, NVMFS5834NL Power MOSFET
Features
40 V, 75 A, 9.3 mW, Single N−Channel
• • • • •
Low RDS(on) Low Capacitance Optimized Gate Charge NVMF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current TA = 25°C TA = 100°C TA = 25°C Steady State TA = 100°C TC = 25°C TC = 100°C TC = 25°C TC = 100°C tp = 10 ms IDM TJ, TSTG IS EAS IAS TL PD ID PD Symbol VDSS VGS ID Value 40 ±20 14 12 3.6 2.