Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- Power, Single N-Channel
80 V, 6.7 mW, 80 A
V(BR)DSS 80 V
RDS(ON) MAX 6.7 mW @ 10 V
ID MAX 80 A
D (5,6)
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFS6H836NWF
- Wettable Flank Option for Enhanced Optical
Inspection
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halide Free, and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain Current RqJC (Notes 1, 3)
Steady TC =...