Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- Power, Single N-Channel
100 V, 2.8 mW, 177 A
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free, Beryllium Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain
TC = 25°C
Current RqJC (Note 1) Steady TC = 100°C
Power Dissipation RqJC (Note 1)
State TC = 25°C
TC = 100°C
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