Datasheet Summary
MOSFET
- Power, Single N-Channel
40 V, 1.15 mW, 252 A
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- LFPAK4 Package, Industry Standard
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)
Symbol
Parameter
Value Unit
VDSS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
20
Continuous Drain
Current RqJC
(Notes 1, 3)
Steady TC = 25 C 252
State
TC = 100 C 178
PD Power Dissipation RqJC (Note 1)
TC = 25 C
TC = 100 C 67
Continuous...