NVMYS008N08LH
NVMYS008N08LH is N-Channel Power MOSFET manufactured by onsemi.
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- LFPAK4 Package, Industry Standard
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain Current Rq JC (Notes 1, 3)
Steady TC = 25°C
State
TC = 100°C
Power Dissipation Rq JC (Note 1)
TC = 25°C
TC = 100°C
Continuous Drain Current Rq JA (Notes 1, 2, 3)
Steady TA = 25°C
State
TA = 100°C
Power Dissipation Rq JA (Notes 1, 2)
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10...
