NVMYS1D3N04C
NVMYS1D3N04C is N-Channel Power MOSFET manufactured by onsemi.
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- LFPAK4 Package, Industry Standard
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)
Symbol
Parameter
Value Unit
VDSS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
20
Continuous Drain
Current Rq JC
(Notes 1, 3)
Steady TC = 25 C 252
State
TC = 100 C 178
PD Power Dissipation Rq JC (Note 1)
TC = 25 C
TC = 100 C 67
Continuous Drain
Current Rq JA
(Notes 1, 2, 3)
Steady TA = 25 C
State
TA = 100 C
PD Power Dissipation Rq JA (Notes 1, 2)
TA = 25...
