NVMYS1D3N04C Description
MOSFET Power, Single N-Channel 40 V, 1.15 mW, 252 A NVMYS1D3N04C.
NVMYS1D3N04C Key Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- LFPAK4 Package, Industry Standard
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
- 55 to C + 175
- Steady State Junction-to-Ambient
- Steady State (Note 2)
- Rev. 2