| Description | DATA SHEET www.onsemi.com Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G-R, NXH350N100H4Q2F2P1G-R This high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes. Features • Extremely Efficient Trench with Field Stop Technology • Low Switch... |
| Features |
• Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layout • Low Package Height • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Solar Inverters • Uninterruptable Power Supplies Systems ... |
| Datasheet |
 NXH350N100H4Q2F2P1G Datasheet 2.73MB |
