Full PDF Text Transcription for P2N2907A (Reference)
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P2N2907A. For precise diagrams, and layout, please refer to the original PDF.
P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emitter Voltage Collector--Base Voltage Emitter--Base V...
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ing Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value --60 --60 --5.0 --600 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg --55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maxim
P2N2907A Datasheet
