P2N2907A Datasheet and Specifications PDF

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2907A/D Amplifier Transistor PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER P2N2907A MAXIMUM RATINGS Rating Collector – Emitter Voltage C.

(IC =
*10 mAdc, IE = 0) Emitter
* Base Breakdown Voltage (IE =
*10 mAdc, IC = 0) Collector Cutoff Current (VCE =
*30 Vdc, VEB(off) =
*0.5 Vdc) Collector Cutoff Current (VCB =
*50 Vdc, IE = 0) (VCB =
*50 Vdc, IE = 0, TA = 150°C) Emitter Cutoff Current (VEB =
*3.0 Vdc) Collector Cutoff Current (VCE =.

P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Collector Current -- .

* These are Pb
*Free Devices* MAXIMUM RATINGS Rating Collector
*Emitter Voltage Collector
*Base Voltage Emitter
*Base Voltage Collector Current
* Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value
*60
*60
*5.0
*600 625 5.0 Unit Vdc Vdc Vdc m.

SYMBOL P2N2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCEO VCBO VEBO 40 60 5 Collector Current Total Power Dissipation @ Ta=25ºC Derate above 25ºC ICM PD 600 625.

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