Continental Device India P2N2907
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | P2N2907 |
|---|---|
| Datasheet | P2N2907 Download |
| Manufacturer |  Continental Device India |
| Description | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC Unless Specified Otherwise)DESCRIPTION
SYMBOL P2N2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCEO VCBO VEBO 40 60 5 Collector Current Total Power Dissipation @ Ta=25ºC Derate above 25ºC ICM PD 600 625 5 Total Power Dissipation @ TC=25ºC Derate above 25ºC PD 1.5 12 Operating and Storage Junction Temperature Range Tj, Tstg - 55 to +150 P2N2907A 60 60 UNIT V V V mA mW mW/ºC W mW/ºC ºC THERMAL RESISTANCE Junction to Case Junction to Ambient Rth (j-c) Rth (j-a) 83.3 ºC/W 200 ºC/WELECTRICAL CHARACTERISTICS
(Ta=25ºC Unless Specified Otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base
