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P2N2907 - PNP SILICON PLANAR EPITAXIAL TRANSISTORS

General Description

SYMBOL P2N2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCEO VCBO VEBO 40 60 5 Collector Current Total Power Dissipation @ Ta=25ºC Derate above 25ºC ICM PD 600 625 5 Total Power Dissipation @ TC=25ºC Derate above 25ºC PD 1.5 12 Operating and Storage Junction

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Datasheet Details

Part number P2N2907
Manufacturer CDIL
File Size 88.07 KB
Description PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet P2N2907 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package CB E Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCEO VCBO VEBO 40 60 5 Collector Current Total Power Dissipation @ Ta=25ºC Derate above 25ºC ICM PD 600 625 5 Total Power Dissipation @ TC=25ºC Derate above 25ºC PD 1.