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P2N2907A
Amplifier Transistor
PNP Silicon
Features
• These are Pb--Free Devices*
MAXIMUM RATINGS
Rating Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol VCEO VCBO VEBO IC PD
Value --60 --60 --5.0 --600 625 5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
W
Derate above 25°C
12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
--55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Thermal Resistance, Junction to Case
RθJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
P2N2907A Datasheet
