Datasheet Summary
Diode
- Power, Bare Die
Gen VII, Fast Recovery 1200 V, 55 A
Features
- Advanced Gen VII Technology
- Fast and Soft Recovery
- Maximum Junction Temperature 175°C
- Low Forward Voltage: VF = 1.78 V (Typ.) @ IF = 55 A
- Easy to Parallel Operation
Typical Applications
- Solar
- Energy storage
- Industrial motor control
MECHANICAL PARAMETERS
Parameter Die Size (w/ Scribe Lane) Anode Pad Size Scribe Lane Width Die Thickness Top Metal Back Metal Topside Passivation
Value
Unit
3,400 x 6,400 mm2
2,437 x 5,437 mm2
80 mm
119 mm
6 mm AlSiCu
1.65 mm Ti/NiV/Ag
Silicon Nitride plus Polyimide
Wafer Diameter
200 mm
Max Possible Die Per Wafer
Remended Storage...