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RB521S30T1 Datasheet

Schottky Barrier Diode

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RB521S30T1
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Extremely Fast Switching Speed
Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA
Low Reverse Current
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
VR
Forward Current DC
IF
ESD Rating: Class 1C per Human Body Model
ESD Rating: Class C per Machine Model
30 Vdc
200 mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board, PD 200 mW
(Note 1) TA = 25°C
Derate above 25°C
1.57 mW/°C
Thermal Resistance Junction−to−Ambient
Junction and Storage
Temperature Range
RqJA
TJ, Tstg
635
−55 to +125
°C/W
°C
1. FR−5 Minimum Pad
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Leakage
(VR = 10 V)
IR − − 30.0 mA
Forward Voltage
(IF = 200 mA)
VF − − 0.50 Vdc
http://onsemi.com
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
1
2
SOD−523
CASE 502
PLASTIC
MARKING DIAGRAM
5Md
5M = Specific Device Code
d = Date Code
ORDERING INFORMATION
Device
Package
Shipping
RB521S30T1
RB521S30T5
SOD−523
SOD−523
4 mm Pitch
3000/Tape & Reel
2 mm Pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
November, 2003 − Rev. 2
1
Publication Order Number:
RB521S30T1/D


  ON Semiconductor Electronic Components Datasheet  

RB521S30T1 Datasheet

Schottky Barrier Diode

No Preview Available !

RB521S30T1
1
100m
TA = 125°C
10m TA = 75°C
1m
100µ
10µ
1µ
0
TA = 25°C
TA = −25°C
0.1 0.2 0.3 0.4 0.5
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Characteristics
10m
1m
100m
10m
1m
100n
10n
1n
0.6 0
TA = 125°C
TA = 75°C
TA = 25°C
TA = −25°C
5 10 15 20 25
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Characteristics
30
20
18
16
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Total Capacitance
http://onsemi.com
2


Part Number RB521S30T1
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 4 Pages
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