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RHRG5060 Datasheet

Hyperfast Diode

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Hyperfast Diode
50 A, 600 V
RHRG5060
Description
The RHRG5060 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes
and is silicon nitride passivated ionimplanted epitaxial planar
construction. These devices are intended to be used
as freewheeling/ clamping diodes and diodes in a variety of switching
power supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power
loss in the switching transistors.
Features
Hyperfast Recovery ( trr = 50 ns (@ IF = 50 A )
Max Forward Voltage( VF = 2.1 V (@ TC = 25 °C )
600 V Reverse Voltage and High Reliability
Avalanche Energy Rated
This Device is PbFree and is RoHS Compliant
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TC = 93 °C)
Repetitive Peak Surge Current
(Square Wave, 20 kHz)
VRRM
600
V
VRWM
600
V
VR
600
V
IF(AV)
50
A
IFRM
100
A
Nonrepetitive Peak Surge Current
(Halfwave 1 Phase, 60 Hz)
IFSM
500
A
Maximum Power Dissipation
Avalanche Energy
(See Figure 10 and Figure 11)
PD
EAVL
150
W
40
mJ
Operating and Storage Temperature
TSTG, TJ
65 to
°C
+175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
ANODE
CATHODE
JEDEC STYLE
TO247
340CL
MARKING DIAGRAM
$Y&Z&3&K
RHRG5060
$Y
&Z
&3
&K
RHRG5060
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
1. Cathode
2. Anode
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
March, 2020 Rev. 3
Publication Order Number:
RHRG5060/D


  ON Semiconductor Electronic Components Datasheet  

RHRG5060 Datasheet

Hyperfast Diode

No Preview Available !

RHRG5060
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Package
RHRG5060
TO2472L
Brand
RHRG5060
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions Min
Typ
Max Unit
VF
Instantaneous Forward Voltage
(Pulse Width = 300 ms, Duty Cycle = 2%)
IF = 50 A
IF = 50 A,
TC = 150°C
2.1
V
1.7
V
IR
Instantaneous Reverse Current
VR = 600 V
VR = 600 V
TC = 150°C
250
mA
1.5
mA
trr
Reverse Recovery Time (See Figure 9 )
Summation of ta + tb
IF = 1 A,
dlF/dt = 100 A/ms
45
ns
IF = 50 A,
dIF/dt = 100 A/ms
50
ns
ta
Time to Reach Peak Reverse Current (See Figure 9)
IF = 50 A,
25
ns
dIF/dt = 100 A/ms
tb
Time from Peak IRM to Projected Zero Crossing of IRM
IF = 50 A,
20
ns
Based on a Straight Line from Peak IRM Through 25%
dIF/dt = 100 A/ms
of IRM (See Figure 9)
Qrr
Reverse Recovery Charge
IF = 50 A,
65
nC
dIF/dt = 100 A/ms
CJ
Junction Capacitance
VR = 10 V,
IF = 0 A
140
pF
RqJC
Thermal Resistance Junction to Case
1.0
°C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2



Part Number RHRG5060
Description Hyperfast Diode
Maker ON Semiconductor
Total Page 3 Pages
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