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Si4542DY - 30V Complementary PowerTrench MOSFET

Features

  • This complementary MOSFET device is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

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Datasheet Details

Part number Si4542DY
Manufacturer onsemi
File Size 158.34 KB
Description 30V Complementary PowerTrench MOSFET
Datasheet download datasheet Si4542DY Datasheet

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Si4542DY Si4542DY 30V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Q1: N-Channel 6 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 35 mΩ @ VGS = 4.5V • Q2: P-Channel –6 A, –30 V RDS(on) = 32 mΩ @ VGS = –10V RDS(on) = 45 mΩ @ VGS = –4.
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