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  ON Semiconductor Electronic Components Datasheet  

TIP41C Datasheet

NPN Transistor

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TIP41A / TIP41B / TIP41C
NPN Epitaxial Silicon Transistor
Features
• Medium Power Linear Switching Applications
• Complement to TIP42 Series
1
TO-220
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number
TIP41A
TIP41B
TIP41C
TIP41CTU
Top Mark
TIP41A
TIP41B
TIP41C
TIP41C
Package
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Single Gauge)
Packing Method
Bulk
Bulk
Bulk
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
TIP41A
60
VCBO
Collector-Base Voltage
TIP41B
80
V
TIP41C
100
TIP41A
60
VCEO
Collector-Emitter Voltage
TIP41B
80
V
TIP41C
100
VEBO
IC
ICP
IB
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Junction Temperature
Storage Temperature Range
5
V
6
A
10
A
2
A
150
°C
-65 to 150
°C
© 2000 Semiconductor Components Industries, LLC.
November-2017,Rev. 2
Publication Order Number:
TIP41C/D


  ON Semiconductor Electronic Components Datasheet  

TIP41C Datasheet

NPN Transistor

No Preview Available !

Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
PC
Parameter
Collector Dissipation (TC = 25°C)
Collector Dissipation (TA = 25°C)
Value
65
2
Unit
W
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VCEO(sus)
TIP41A
Collector-Emitter Sustaining
Voltage(1)
TIP41B
TIP41C
ICEO
Collector Cut-Off Current
TIP41A
TIP41B /
TIP41C
TIP41A
ICES Collector Cut-Off Current TIP41B
TIP41C
IEBO Emitter Cut-Off Current
hFE
DC Current Gain(1)
VCE(sat) Collector-Emitter Saturation Voltage(1)
VBE(on) Base-Emitter On Voltage(1)
fT
Current Gain Bandwidth Product
Note:
1. Pulse test: pw 300 μs, duty cycle 2%.
Conditions
IC = 30 mA, IB = 0
VCE = 30 V, IB = 0
VCE = 60 V, IB = 0
VCE = 60 V, VEB = 0
VCE = 80 V, VEB = 0
VCE = 100 V, VEB = 0
VEB = 5 V, IC = 0
VCE = 4 V, IC = 0.3 A
VCE = 4 V, IC = 3 A
IC = 6 A, IB = 600 mA
VCE = 4 V, IC = 6 A
VCE = 10 V, IC = 500 mA,
f = 1 MHz
Min.
60
80
100
30
15
3.0
Max.
0.7
0.7
400
400
400
1
75
1.5
2.0
Unit
V
mA
μA
mA
V
V
MHz
www.onsemi.com
2


Part Number TIP41C
Description NPN Transistor
Maker ON Semiconductor
PDF Download

TIP41C Datasheet PDF





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