OP775A Datasheet | OPTEK Technologies

Features - - - - Supresses high frequency noise Variety of sensitivity ranges Wide receiving angle Side looking package for space limited applications Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Collector- Emitter Volt age- - - - - - - - . . . . 30 V Emitter- Collector Volt age - - - - - - - - . . . 5.0 V Stor age and Tem pera ture Range - - - - - . . -40° C to +100° C Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing iron]- - - - - - - - - - - . . 260 ° C(1) Power Dis si pa tion - - - - - - - - . . . . 100 m W(2) NOTES: (1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec. max. when flow sol der ing. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.33 m W/° C above 25° C. (3) Light source is an unfiltered Ga As LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (4) To calculate typical collector dark current in µA, use the formula ICED = 10(0.040T A-3.4) where TA is ambient temperature in ° C. Description The OP775 consists of an NPN phototransistor and 1000 p F capacitor molded in a blue tinted epoxy package. The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could promise signal integrity. The device’s wide receiving angle provides relatively even reception over a large area. The OP775 is 100% production tested using an infrared light source for close correlation with Optek’s Ga As and Ga AIAs emitters. The side-looking package is designed for easy...